M. Dammann, W. Pletschen, Patrick Waltereit, W. Bronner, Rüdiger Quay, S. Müller, Michael Mikulla, Oliver Ambacher, P. J. van der Wel, S. Murad, T. Rödle, R. Behtash, F. Bourgeois, K. Riepe, M. Fagerlind, E. Ö. Sveinbjörnsson. Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. Microelectronics Reliability, 49(5):474-477, 2009. [doi]
@article{DammannPWBQMMAWMRBBRFS09,
title = {Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems},
author = {M. Dammann and W. Pletschen and Patrick Waltereit and W. Bronner and Rüdiger Quay and S. Müller and Michael Mikulla and Oliver Ambacher and P. J. van der Wel and S. Murad and T. Rödle and R. Behtash and F. Bourgeois and K. Riepe and M. Fagerlind and E. Ö. Sveinbjörnsson},
year = {2009},
doi = {10.1016/j.microrel.2009.02.005},
url = {http://dx.doi.org/10.1016/j.microrel.2009.02.005},
tags = {reliability, mobile},
researchr = {https://researchr.org/publication/DammannPWBQMMAWMRBBRFS09},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {49},
number = {5},
pages = {474-477},
}