Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro - researchr publication authors

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Le Dinh Trang Dang, Trinh Dinh Linh, Ngyuen Thanh Dat, Changhong Min, Jinsang Kim, Ik Joon Chang, Jin-Woo Han. Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-5, IEEE, 2020. [doi]

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