Le Dinh Trang Dang, Trinh Dinh Linh, Ngyuen Thanh Dat, Changhong Min, Jinsang Kim, Ik Joon Chang, Jin-Woo Han. Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-5, IEEE, 2020. [doi]
@inproceedings{DangLDMKCH20,
title = {Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro},
author = {Le Dinh Trang Dang and Trinh Dinh Linh and Ngyuen Thanh Dat and Changhong Min and Jinsang Kim and Ik Joon Chang and Jin-Woo Han},
year = {2020},
doi = {10.1109/IRPS45951.2020.9128910},
url = {https://doi.org/10.1109/IRPS45951.2020.9128910},
researchr = {https://researchr.org/publication/DangLDMKCH20},
cites = {0},
citedby = {0},
pages = {1-5},
booktitle = {2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020},
publisher = {IEEE},
isbn = {978-1-7281-3199-3},
}