Thuy Dao, Todd Roggenbauer, Gordon Boyd. Improved deep trench isolation breakdown voltage for SmartMOS. In Proceedings of 2013 International Conference on IC Design & Technology, ICICDT 2013, Pavia, Italy, May 29-31, 2013. pages 101-104, IEEE, 2013. [doi]
@inproceedings{DaoRB13, title = {Improved deep trench isolation breakdown voltage for SmartMOS}, author = {Thuy Dao and Todd Roggenbauer and Gordon Boyd}, year = {2013}, doi = {10.1109/ICICDT.2013.6563313}, url = {http://dx.doi.org/10.1109/ICICDT.2013.6563313}, researchr = {https://researchr.org/publication/DaoRB13}, cites = {0}, citedby = {0}, pages = {101-104}, booktitle = {Proceedings of 2013 International Conference on IC Design & Technology, ICICDT 2013, Pavia, Italy, May 29-31, 2013}, publisher = {IEEE}, isbn = {978-1-4673-4740-2}, }