Analysis, modeling and silicon correlation of low-voltage flop data retention in 28nm process technology

Animesh Datta, Mohamed H. Abu-Rahma, Sachin Dileep Dasnurkar, Hadi Rasouli, Sean Tamjidi, Ming Cai, Samit Sengupta, P. R. Chidambaram, Raghavan Thirumala, Nikhil Kulkarni, Prasanna Seeram, Prasad Bhadri, Prayag Patel, Sei Seung Yoon, Esin Terzioglu. Analysis, modeling and silicon correlation of low-voltage flop data retention in 28nm process technology. In International Symposium on Quality Electronic Design, ISQED 2013, Santa Clara, CA, USA, March 4-6, 2013. pages 580-584, IEEE, 2013. [doi]

@inproceedings{DattaADRTCSCTKSBPYT13,
  title = {Analysis, modeling and silicon correlation of low-voltage flop data retention in 28nm process technology},
  author = {Animesh Datta and Mohamed H. Abu-Rahma and Sachin Dileep Dasnurkar and Hadi Rasouli and Sean Tamjidi and Ming Cai and Samit Sengupta and P. R. Chidambaram and Raghavan Thirumala and Nikhil Kulkarni and Prasanna Seeram and Prasad Bhadri and Prayag Patel and Sei Seung Yoon and Esin Terzioglu},
  year = {2013},
  doi = {10.1109/ISQED.2013.6523669},
  url = {http://dx.doi.org/10.1109/ISQED.2013.6523669},
  researchr = {https://researchr.org/publication/DattaADRTCSCTKSBPYT13},
  cites = {0},
  citedby = {0},
  pages = {580-584},
  booktitle = {International Symposium on Quality Electronic Design, ISQED 2013, Santa Clara, CA, USA, March 4-6, 2013},
  publisher = {IEEE},
  isbn = {978-1-4673-4951-2},
}