Comprehensive investigation of gate oxide short in FinFETs

Roya Dibaj, Dhamin Al-Khalili, Maitham Shams. Comprehensive investigation of gate oxide short in FinFETs. In 35th IEEE VLSI Test Symposium, VTS 2017, Las Vegas, NV, USA, April 9-12, 2017. pages 1-6, IEEE, 2017. [doi]

Abstract

Abstract is missing.