Resistive-open defect injection in SRAM core-cell: analysis and comparison between 0.13 µm and 90 nm technologies

Luigi Dilillo, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Magali Bastian. Resistive-open defect injection in SRAM core-cell: analysis and comparison between 0.13 µm and 90 nm technologies. In William H. Joyner Jr., Grant Martin, Andrew B. Kahng, editors, Proceedings of the 42nd Design Automation Conference, DAC 2005, San Diego, CA, USA, June 13-17, 2005. pages 857-862, ACM, 2005. [doi]

Abstract

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