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M. Diop, N. Revil, M. Marin, F. Monsieur, P. Chevalier, G. Ghibaudo. Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride. Microelectronics Reliability, 48(8-9):1198-1201, 2008. [doi]
Possibly Related PublicationsThe following publications are possibly variants of this publication: Hot-Carrier Reliability for Si and SiGe HBTs: Aging Procedure, Extrapolation Model Limitations and ApplicationsN. Revil, X. Garros. mr, 41(9-10):1307-1312, 2001.
The following publications are possibly variants of this publication: