M. Diop, N. Revil, M. Marin, F. Monsieur, P. Chevalier, G. Ghibaudo. Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride. Microelectronics Reliability, 48(8-9):1198-1201, 2008. [doi]
Abstract is missing.