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Fayçal Djeffal, Z. Ghoggali, Zohir Dibi, N. Lakhdar. Analytical analysis of nanoscale multiple gate MOSFETs including effects of hot-carrier induced interface charges. Microelectronics Reliability, 49(4):377-381, 2009. [doi]
Possibly Related PublicationsThe following publications are possibly variants of this publication: A two-dimensional semi-analytical analysis of the subthreshold-swing behavior including free carriers and interfacial traps effects for nanoscale double-gate MOSFETsFayçal Djeffal, T. Bendib, Mohamed Amir Abdi. mj, 42(12):1391-1395, 2011. [doi] Drain current model for undoped Gate Stack Double Gate (GSDG) MOSFETs including the hot-carrier degradation effectsFayçal Djeffal, T. Bentrcia, Mohamed Amir Abdi, T. Bendib. mr, 51(3):550-555, 2011. [doi]
The following publications are possibly variants of this publication: