A 0.3 pJ/access 8T data-aware SRAM utilizing column-based data encoding for ultra-low power applications - researchr publication authors

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Anh-Tuan Do, Seyed Mohammad Ali Zeinolabedin, Tony Tae-Hyoung Kim. A 0.3 pJ/access 8T data-aware SRAM utilizing column-based data encoding for ultra-low power applications. In IEEE Asian Solid-State Circuits Conference, A-SSCC 2016, Toyama, Japan, November 7-9, 2016. pages 173-176, IEEE, 2016. [doi]

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