A 0.3 pJ/access 8T data-aware SRAM utilizing column-based data encoding for ultra-low power applications

Anh-Tuan Do, Seyed Mohammad Ali Zeinolabedin, Tony Tae-Hyoung Kim. A 0.3 pJ/access 8T data-aware SRAM utilizing column-based data encoding for ultra-low power applications. In IEEE Asian Solid-State Circuits Conference, A-SSCC 2016, Toyama, Japan, November 7-9, 2016. pages 173-176, IEEE, 2016. [doi]

@inproceedings{DoZK16,
  title = {A 0.3 pJ/access 8T data-aware SRAM utilizing column-based data encoding for ultra-low power applications},
  author = {Anh-Tuan Do and Seyed Mohammad Ali Zeinolabedin and Tony Tae-Hyoung Kim},
  year = {2016},
  doi = {10.1109/ASSCC.2016.7844163},
  url = {http://dx.doi.org/10.1109/ASSCC.2016.7844163},
  researchr = {https://researchr.org/publication/DoZK16},
  cites = {0},
  citedby = {0},
  pages = {173-176},
  booktitle = {IEEE Asian Solid-State Circuits Conference, A-SSCC 2016, Toyama, Japan, November 7-9, 2016},
  publisher = {IEEE},
  isbn = {978-1-5090-3700-1},
}