Wenfeng Dong, Dong Liu, Shun Xu, Bing Chen, Yi Zhao. Demonstrate high Roff/Ron ratio and forming-free RRAM for rFPGA application based on switching layer engineering. In Yajie Qin, Zhiliang Hong, Ting-Ao Tang, editors, 12th IEEE International Conference on ASIC, ASICON 2017, Guiyang, China, October 25-28, 2017. pages 851-854, IEEE, 2017. [doi]
@inproceedings{DongLXCZ17,
title = {Demonstrate high Roff/Ron ratio and forming-free RRAM for rFPGA application based on switching layer engineering},
author = {Wenfeng Dong and Dong Liu and Shun Xu and Bing Chen and Yi Zhao},
year = {2017},
doi = {10.1109/ASICON.2017.8252610},
url = {https://doi.org/10.1109/ASICON.2017.8252610},
researchr = {https://researchr.org/publication/DongLXCZ17},
cites = {0},
citedby = {0},
pages = {851-854},
booktitle = {12th IEEE International Conference on ASIC, ASICON 2017, Guiyang, China, October 25-28, 2017},
editor = {Yajie Qin and Zhiliang Hong and Ting-Ao Tang},
publisher = {IEEE},
isbn = {978-1-5090-6625-4},
}