Ga2O3 Heterojunction PN Diodes with Suppressed Background Carrier Concentration for Improved Breakdown Voltage - researchr publication authors

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Pengfei Dong, Chenlu Wang, Qinglong Yan, Yingming Wang, Jian Wang, Sami Alghamdi, Zhihong Liu, JinCheng Zhang, Hong Zhou, Yue Hao. Ga2O3 Heterojunction PN Diodes with Suppressed Background Carrier Concentration for Improved Breakdown Voltage. In Device Research Conference, DRC 2023, Santa Barbara, CA, USA, June 25-28, 2023. pages 1-2, IEEE, 2023. [doi]

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