The following publications are possibly variants of this publication:
- Ni/TiO2/ $\beta$-Ga2O3 Heterojunction Diodes with NiO Guard Ring Simultaneously Increasing Breakdown Voltage and Reducing Turn-on VoltageJeremiah Williams, Nolan S. Hendricks, Weisong Wang, Aaron Adams, Joshua Piel, Daniel Dryden, Kyle J. Liddy, Nicholas Sepelak, Bradley Morell, Adam Miesle, Ahmad Islam, Andrew J. Green. drc 2023: 1-2 [doi]
- Metal/BaTiO3/β-Ga2O3 Dielectric Heterojunction Diode with 5.6 MV/cm Breakdown FieldZhanbo Xia, Caivu Wang, Hareesh Chandrasekar, Wyatt Moore, Aidan Lee, Nidhin Kurian Kalarickal, Fengyuan Yang, Siddharth Rajan. drc 2019: 239-240 [doi]
- A Novel SiC Superjunction Trench MOSFET with Integrated Heterojunction Diode for Improved PerformanceMouFu Kong, Ke Huang, Ronghe Yan, Bo Yi, Bingke Zhang, Hongqiang Yang. asicon 2023: 1-4 [doi]
- Breakdown Voltage Enhancement of GaN diodes with High-k DielectricVishank Talesara, Yuxuan Zhang, Junao Cheng, Hongping Zhao, Wu Lu. drc 2022: 1-2 [doi]