Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling

Nausicaa Dornic, Ali Ibrahim, Zoubir Khatir, Son-Ha Tran, J. P. Ousten, Jeffrey Ewanchuk, Stefan Mollov. Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling. Microelectronics Reliability, 88:462-469, 2018. [doi]

@article{DornicIKTOEM18,
  title = {Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling},
  author = {Nausicaa Dornic and Ali Ibrahim and Zoubir Khatir and Son-Ha Tran and J. P. Ousten and Jeffrey Ewanchuk and Stefan Mollov},
  year = {2018},
  doi = {10.1016/j.microrel.2018.07.041},
  url = {https://doi.org/10.1016/j.microrel.2018.07.041},
  researchr = {https://researchr.org/publication/DornicIKTOEM18},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {88},
  pages = {462-469},
}