Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling

Nausicaa Dornic, Ali Ibrahim, Zoubir Khatir, Son-Ha Tran, J. P. Ousten, Jeffrey Ewanchuk, Stefan Mollov. Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling. Microelectronics Reliability, 88:462-469, 2018. [doi]

Abstract

Abstract is missing.