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Device-process simulation of discrete silicon stabilitron with the stabilizing voltage of 6, 5 V

N. L. Dudar, V. M. Borzdov. Device-process simulation of discrete silicon stabilitron with the stabilizing voltage of 6, 5 V. In Vladimir Hahanov, Yervant Zorian, editors, 9th East-West Design & Test Symposium, EWDTS 2011, Sevastopol, Ukraine, September 9-12, 2011. pages 237-239, IEEE, 2011. [doi]

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N. L. Dudar

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V. M. Borzdov

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