N. L. Dudar, V. M. Borzdov. Device-process simulation of discrete silicon stabilitron with the stabilizing voltage of 6, 5 V. In Vladimir Hahanov, Yervant Zorian, editors, 9th East-West Design & Test Symposium, EWDTS 2011, Sevastopol, Ukraine, September 9-12, 2011. pages 237-239, IEEE, 2011. [doi]
@inproceedings{DudarB11,
title = {Device-process simulation of discrete silicon stabilitron with the stabilizing voltage of 6, 5 V},
author = {N. L. Dudar and V. M. Borzdov},
year = {2011},
doi = {10.1109/EWDTS.2011.6116417},
url = {http://doi.ieeecomputersociety.org/10.1109/EWDTS.2011.6116417},
researchr = {https://researchr.org/publication/DudarB11},
cites = {0},
citedby = {0},
pages = {237-239},
booktitle = {9th East-West Design & Test Symposium, EWDTS 2011, Sevastopol, Ukraine, September 9-12, 2011},
editor = {Vladimir Hahanov and Yervant Zorian},
publisher = {IEEE},
isbn = {978-1-4577-1957-8},
}