Analysis of hot carrier effects in a 0.35 µm high voltage n-channel LDMOS transistor - researchr publication authors

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Hubert Enichlmair, S. Carniello, J. M. Park, Rainer Minixhofer. Analysis of hot carrier effects in a 0.35 µm high voltage n-channel LDMOS transistor. Microelectronics Reliability, 47(9-11):1439-1443, 2007. [doi]

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