Rainer Minixhofer - researchr alias

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Viewing Publication 1 - 8 from 8

2015

Towards probabilistic analog behavioral modelingAndré Lange, Ihor Harasymiv, Oliver Eisenberger, Frederic Roger, Joachim Haase, Rainer Minixhofer. iscas 2015: 2728-2731 [doi]

Building interchangeable black-box models of integrated circuits for EMC simulationsMarko Magerl, Christian Stockreiter, Oliver Eisenberger, Rainer Minixhofer, Adrijan Baric. emccompo 2015: 258-263 [doi]

2010

Interface traps density-of-states as a vital component for hot-carrier degradation modelingStanislav Tyaginov, Ivan Starkov, Oliver Triebl, J. Cervenka, C. Jungemann, S. Carniello, J. M. Park, Hubert Enichlmair, Markus Karner, Ch. Kernstock, E. Seebacher, Rainer Minixhofer, Hajdin Ceric, Tibor Grasser. mr, 50(9-11):1267-1272, 2010. [doi]

2008

2007

Analysis of hot carrier effects in a 0.35 µm high voltage n-channel LDMOS transistorHubert Enichlmair, S. Carniello, J. M. Park, Rainer Minixhofer. mr, 47(9-11):1439-1443, 2007. [doi]

Negative bias temperature instability modeling for high-voltage oxides at different stress temperaturesRobert Entner, Tibor Grasser, Oliver Triebl, Hubert Enichlmair, Rainer Minixhofer. mr, 47(4-5):697-699, 2007. [doi]

2004

Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structuresStefan Holzer, Rainer Minixhofer, Clemens Heitzinger, Johannes Fellner, Tibor Grasser, Siegfried Selberherr. mj, 35(10):805-810, 2004. [doi]

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