Hubert Enichlmair, S. Carniello, J. M. Park, Rainer Minixhofer. Analysis of hot carrier effects in a 0.35 µm high voltage n-channel LDMOS transistor. Microelectronics Reliability, 47(9-11):1439-1443, 2007. [doi]
@article{EnichlmairCPM07,
title = {Analysis of hot carrier effects in a 0.35 µm high voltage n-channel LDMOS transistor},
author = {Hubert Enichlmair and S. Carniello and J. M. Park and Rainer Minixhofer},
year = {2007},
doi = {10.1016/j.microrel.2007.07.034},
url = {http://dx.doi.org/10.1016/j.microrel.2007.07.034},
tags = {analysis},
researchr = {https://researchr.org/publication/EnichlmairCPM07},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {47},
number = {9-11},
pages = {1439-1443},
}