Performance comparison of state-of-the-art heterojunction bipolar devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP - researchr publication authors

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Onur Esame, Yasar Gurbuz, Ibrahim Tekin, Ayhan Bozkurt. Performance comparison of state-of-the-art heterojunction bipolar devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP. Microelectronics Journal, 35(11):901-908, 2004. [doi]

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