Onur Esame, Yasar Gurbuz, Ibrahim Tekin, Ayhan Bozkurt. Performance comparison of state-of-the-art heterojunction bipolar devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP. Microelectronics Journal, 35(11):901-908, 2004. [doi]
@article{EsameGTB04,
title = {Performance comparison of state-of-the-art heterojunction bipolar devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP},
author = {Onur Esame and Yasar Gurbuz and Ibrahim Tekin and Ayhan Bozkurt},
year = {2004},
doi = {10.1016/j.mejo.2004.07.003},
url = {http://dx.doi.org/10.1016/j.mejo.2004.07.003},
tags = {rule-based},
researchr = {https://researchr.org/publication/EsameGTB04},
cites = {0},
citedby = {0},
journal = {Microelectronics Journal},
volume = {35},
number = {11},
pages = {901-908},
}