Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis - researchr publication authors

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Eric E. Fabris, Matteo Meneghini, Carlo De Santi, Matteo Borga, Gaudenzio Meneghesso, Enrico Zanoni, Y. Kinoshita, K. Tanaka, H. Ishida, T. Ueda. Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis. In IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019. pages 1-6, IEEE, 2019. [doi]

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