Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis

Eric E. Fabris, Matteo Meneghini, Carlo De Santi, Matteo Borga, Gaudenzio Meneghesso, Enrico Zanoni, Y. Kinoshita, K. Tanaka, H. Ishida, T. Ueda. Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis. In IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019. pages 1-6, IEEE, 2019. [doi]

@inproceedings{FabrisMSBMZKTIU19,
  title = {Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis},
  author = {Eric E. Fabris and Matteo Meneghini and Carlo De Santi and Matteo Borga and Gaudenzio Meneghesso and Enrico Zanoni and Y. Kinoshita and K. Tanaka and H. Ishida and T. Ueda},
  year = {2019},
  doi = {10.1109/IRPS.2019.8720472},
  url = {https://doi.org/10.1109/IRPS.2019.8720472},
  researchr = {https://researchr.org/publication/FabrisMSBMZKTIU19},
  cites = {0},
  citedby = {0},
  pages = {1-6},
  booktitle = {IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019},
  publisher = {IEEE},
  isbn = {978-1-5386-9504-3},
}