Numerical simulation and modeling of static characteristics and electrical noise in submicron MOS transistors - researchr publication authors

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M. Fadlallah, Gérard Ghibaudo, Jalal Jomaah, M. Zoaeter. Numerical simulation and modeling of static characteristics and electrical noise in submicron MOS transistors. In Proceedings of the 2000 7th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2000, Jounieh, Lebanon, December 17-20, 2000. pages 940-943, IEEE, 2000. [doi]

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