Donato Francesco Falcone, Stephan Menzel, Tommaso Stecconi, Antonio La Porta, Ludovico Carraria-Martinotti, Bert Jan Offrein, Valeria Bragaglia. Physical modeling and design rules of analog Conductive Metal Oxide-HfO2 ReRAM. In IEEE International Memory Workshop, IMW 2023, Monterey, CA, USA, May 21-24, 2023. pages 1-4, IEEE, 2023. [doi]
Abstract is missing.