High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation

Yutong Fan, Xi Liu, Ren Huang, Yu Wen, Weihang Zhang, JinCheng Zhang, Zhihong Liu, Shenglei Zhao. High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation. Science in China Series F: Information Sciences, 66(12), December 2023. [doi]

Authors

Yutong Fan

This author has not been identified. Look up 'Yutong Fan' in Google

Xi Liu

This author has not been identified. Look up 'Xi Liu' in Google

Ren Huang

This author has not been identified. Look up 'Ren Huang' in Google

Yu Wen

This author has not been identified. Look up 'Yu Wen' in Google

Weihang Zhang

This author has not been identified. Look up 'Weihang Zhang' in Google

JinCheng Zhang

This author has not been identified. Look up 'JinCheng Zhang' in Google

Zhihong Liu

This author has not been identified. Look up 'Zhihong Liu' in Google

Shenglei Zhao

This author has not been identified. Look up 'Shenglei Zhao' in Google