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High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation

Yutong Fan, Xi Liu, Ren Huang, Yu Wen, Weihang Zhang, JinCheng Zhang, Zhihong Liu, Shenglei Zhao. High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation. Science in China Series F: Information Sciences, 66(12), December 2023. [doi]

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