High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation

Yutong Fan, Xi Liu, Ren Huang, Yu Wen, Weihang Zhang, JinCheng Zhang, Zhihong Liu, Shenglei Zhao. High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation. Science in China Series F: Information Sciences, 66(12), December 2023. [doi]

@article{FanLHWZZLZ23,
  title = {High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation},
  author = {Yutong Fan and Xi Liu and Ren Huang and Yu Wen and Weihang Zhang and JinCheng Zhang and Zhihong Liu and Shenglei Zhao},
  year = {2023},
  month = {December},
  doi = {10.1007/s11432-022-3707-2},
  url = {https://doi.org/10.1007/s11432-022-3707-2},
  researchr = {https://researchr.org/publication/FanLHWZZLZ23},
  cites = {0},
  citedby = {0},
  journal = {Science in China Series F: Information Sciences},
  volume = {66},
  number = {12},
}