Dong Fang, Guang Yang, Ming Qiao, Kui Xiao, Xiangyu Yang, Zheng Bian, Bo Zhang. Split-gate trench metal-oxide-semiconductor field effect transistor with an inverted L-shaped source region. Microelectronics Journal, 130:105616, 2022. [doi]
@article{FangYQXYBZ22,
title = {Split-gate trench metal-oxide-semiconductor field effect transistor with an inverted L-shaped source region},
author = {Dong Fang and Guang Yang and Ming Qiao and Kui Xiao and Xiangyu Yang and Zheng Bian and Bo Zhang},
year = {2022},
doi = {10.1016/j.mejo.2022.105616},
url = {https://doi.org/10.1016/j.mejo.2022.105616},
researchr = {https://researchr.org/publication/FangYQXYBZ22},
cites = {0},
citedby = {0},
journal = {Microelectronics Journal},
volume = {130},
pages = {105616},
}