Split-gate trench metal-oxide-semiconductor field effect transistor with an inverted L-shaped source region

Dong Fang, Guang Yang, Ming Qiao, Kui Xiao, Xiangyu Yang, Zheng Bian, Bo Zhang. Split-gate trench metal-oxide-semiconductor field effect transistor with an inverted L-shaped source region. Microelectronics Journal, 130:105616, 2022. [doi]

Abstract

Abstract is missing.