Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations

M. Faqir, M. Bouya, N. Malbert, Nathalie Labat, D. Carisetti, B. Lambert, G. Verzellesi, Fausto Fantini. Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations. Microelectronics Reliability, 50(9-11):1520-1522, 2010. [doi]

Abstract

Abstract is missing.