N. Malbert - researchr alias

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Viewing Publication 1 - 12 from 12

2013

2012

Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage testB. Lambert, Nathalie Labat, D. Carisetti, S. Karboyan, Jean-Guy Tartarin, J. Thorpe, Laurent Brunel, A. Curutchet, N. Malbert, E. Latu-Romain, M. Mermoux. mr, 52(9-10):2184-2187, 2012. [doi]

2010

Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulationsM. Faqir, M. Bouya, N. Malbert, Nathalie Labat, D. Carisetti, B. Lambert, G. Verzellesi, Fausto Fantini. mr, 50(9-11):1520-1522, 2010. [doi]

2009

Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTsN. Malbert, Nathalie Labat, A. Curutchet, C. Sury, V. Hoel, J.-C. De Jaeger, N. Defrance, Y. Douvry, Christian Dua, Mourad Oualli, C. Bru-Chevallier, J. M. Bluet, W. Chikhaoui. mr, 49(9-11):1216-1221, 2009. [doi]

2008

Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniquesM. Bouya, N. Malbert, Nathalie Labat, D. Carisetti, Philippe Perdu, J. C. Clement, B. Lambert, M. Bonnet. mr, 48(8-9):1366-1369, 2008. [doi]

2007

Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiCM. Bouya, D. Carisetti, N. Malbert, Nathalie Labat, Philippe Perdu, J. C. Clement, M. Bonnet, G. Pataut. mr, 47(9-11):1630-1633, 2007. [doi]

2006

AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise MeasurementsA. Sozza, A. Curutchet, C. Dua, N. Malbert, N. Labat, A. Touboul. mr, 46(9-11):1725-1730, 2006. [doi]

2005

Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditionsN. Ismail, N. Malbert, N. Labat, A. Touboul, J. L. Muraro, F. Brasseau, D. Langrez. mr, 45(9-11):1611-1616, 2005. [doi]

2003

Low frequency drain noise comparison of AlGaN/GaN HEMT s grown on silicon, SiC and sapphire substratesA. Curutchet, N. Malbert, N. Labat, A. Touboul, C. Gaquière, A. Minko, M. Uren. mr, 43(9-11):1713-1718, 2003. [doi]

2002

Degradation mechanisms induced by thermal and bias stresses in InP HEMTsN. Labat, N. Malbert, B. Lambert, A. Touboul, F. Garat, B. Proust. mr, 42(9-11):1575-1580, 2002. [doi]

2001

Evolution of LF noise in Power PHEMT s submitted to RF and DC Step StressesB. Lambert, N. Malbert, N. Labat, F. Verdier, A. Touboul, P. Huguet, R. Bonnet, G. Pataut. mr, 41(9-10):1573-1578, 2001.

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