Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements

S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, A. Curutchet, N. Malbert, Nathalie Labat, D. Carisetti, B. Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau. Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. Microelectronics Reliability, 53(9-11):1491-1495, 2013. [doi]

Abstract

Abstract is missing.