N. Labat - researchr alias

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Viewing Publication 1 - 8 from 8

2006

AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise MeasurementsA. Sozza, A. Curutchet, C. Dua, N. Malbert, N. Labat, A. Touboul. mr, 46(9-11):1725-1730, 2006. [doi]

2005

Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditionsN. Ismail, N. Malbert, N. Labat, A. Touboul, J. L. Muraro, F. Brasseau, D. Langrez. mr, 45(9-11):1611-1616, 2005. [doi]

EditorialN. Labat. mr, 45(9-11):1275-1276, 2005. [doi]

2003

High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effectsM. Belhaj, C. Maneux, N. Labat, A. Touboul, P. Bove. mr, 43(9-11):1731-1736, 2003. [doi]

Low frequency drain noise comparison of AlGaN/GaN HEMT s grown on silicon, SiC and sapphire substratesA. Curutchet, N. Malbert, N. Labat, A. Touboul, C. Gaquière, A. Minko, M. Uren. mr, 43(9-11):1713-1718, 2003. [doi]

1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stressesJ. C. Martin, C. Maneux, N. Labat, A. Touboul, Muriel Riet, S. Blayac, M. Kahn, Jean Godin. mr, 43(9-11):1725-1730, 2003. [doi]

2002

Degradation mechanisms induced by thermal and bias stresses in InP HEMTsN. Labat, N. Malbert, B. Lambert, A. Touboul, F. Garat, B. Proust. mr, 42(9-11):1575-1580, 2002. [doi]

2001

Evolution of LF noise in Power PHEMT s submitted to RF and DC Step StressesB. Lambert, N. Malbert, N. Labat, F. Verdier, A. Touboul, P. Huguet, R. Bonnet, G. Pataut. mr, 41(9-10):1573-1578, 2001.

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