Degradation mechanisms induced by thermal and bias stresses in InP HEMTs

N. Labat, N. Malbert, B. Lambert, A. Touboul, F. Garat, B. Proust. Degradation mechanisms induced by thermal and bias stresses in InP HEMTs. Microelectronics Reliability, 42(9-11):1575-1580, 2002. [doi]

Abstract

Abstract is missing.