N. Labat, N. Malbert, B. Lambert, A. Touboul, F. Garat, B. Proust. Degradation mechanisms induced by thermal and bias stresses in InP HEMTs. Microelectronics Reliability, 42(9-11):1575-1580, 2002. [doi]
@article{LabatMLTGP02,
title = {Degradation mechanisms induced by thermal and bias stresses in InP HEMTs},
author = {N. Labat and N. Malbert and B. Lambert and A. Touboul and F. Garat and B. Proust},
year = {2002},
doi = {10.1016/S0026-2714(02)00193-2},
url = {http://dx.doi.org/10.1016/S0026-2714(02)00193-2},
researchr = {https://researchr.org/publication/LabatMLTGP02},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {42},
number = {9-11},
pages = {1575-1580},
}