High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

Davide Favero, A. Cavaliere, Carlo De Santi, Matteo Borga, W. Gonçalez Filho, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini. High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. In IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023. pages 1-6, IEEE, 2023. [doi]

This author has not been identified. Look up 'Davide Favero' in GoogleThis author has not been identified. Look up 'A. Cavaliere' in GoogleThis author has not been identified. Look up 'Carlo De Santi' in GoogleThis author has not been identified. Look up 'Matteo Borga' in GoogleThis author has not been identified. Look up 'W. Gonçalez Filho' in GoogleThis author has not been identified. Look up 'Karen Geens' in GoogleThis author has not been identified. Look up 'Benoit Bakeroot' in GoogleThis author has not been identified. Look up 'Stefaan Decoutere' in GoogleThis author has not been identified. Look up 'Gaudenzio Meneghesso' in GoogleThis author has not been identified. Look up 'Enrico Zanoni' in GoogleThis author has not been identified. Look up 'Matteo Meneghini' in Google

runs on WebDSL