Davide Favero, A. Cavaliere, Carlo De Santi, Matteo Borga, W. Gonçalez Filho, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini. High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. In IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023. pages 1-6, IEEE, 2023. [doi]
@inproceedings{FaveroCSBFGBDMZM23,
title = {High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps},
author = {Davide Favero and A. Cavaliere and Carlo De Santi and Matteo Borga and W. Gonçalez Filho and Karen Geens and Benoit Bakeroot and Stefaan Decoutere and Gaudenzio Meneghesso and Enrico Zanoni and Matteo Meneghini},
year = {2023},
doi = {10.1109/IRPS48203.2023.10117667},
url = {https://doi.org/10.1109/IRPS48203.2023.10117667},
researchr = {https://researchr.org/publication/FaveroCSBFGBDMZM23},
cites = {0},
citedby = {0},
pages = {1-6},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023},
publisher = {IEEE},
isbn = {978-1-6654-5672-2},
}