Influence of oxide breakdown position and device aspect ratio on MOSFET s output characteristics

R. Fernández, R. Rodríguez, M. Nafría, X. Aymerich. Influence of oxide breakdown position and device aspect ratio on MOSFET s output characteristics. Microelectronics Reliability, 45(5-6):861-864, 2005. [doi]

Authors

R. Fernández

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R. Rodríguez

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M. Nafría

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X. Aymerich

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