Daniel M. Fleetwood. Radiation Effects in AlGaN/GaN HEMTs and Ga2O3 Diodes. In Device Research Conference, DRC 2023, Santa Barbara, CA, USA, June 25-28, 2023. pages 1-2, IEEE, 2023. [doi]
@inproceedings{Fleetwood23,
title = {Radiation Effects in AlGaN/GaN HEMTs and Ga2O3 Diodes},
author = {Daniel M. Fleetwood},
year = {2023},
doi = {10.1109/DRC58590.2023.10186943},
url = {https://doi.org/10.1109/DRC58590.2023.10186943},
researchr = {https://researchr.org/publication/Fleetwood23},
cites = {0},
citedby = {0},
pages = {1-2},
booktitle = {Device Research Conference, DRC 2023, Santa Barbara, CA, USA, June 25-28, 2023},
publisher = {IEEE},
isbn = {979-8-3503-2310-8},
}