Analysis of resistive-bridging defects in SRAM core-cells: A comparative study from 90nm down to 40nm technology nodes - researchr publication authors

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Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine. Analysis of resistive-bridging defects in SRAM core-cells: A comparative study from 90nm down to 40nm technology nodes. In 15th European Test Symposium (ETS 2010), May 24-28, 2010, Prague, Czech Republic. pages 132-137, IEEE Computer Society, 2010. [doi]

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