Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine. Analysis of resistive-bridging defects in SRAM core-cells: A comparative study from 90nm down to 40nm technology nodes. In 15th European Test Symposium (ETS 2010), May 24-28, 2010, Prague, Czech Republic. pages 132-137, IEEE Computer Society, 2010. [doi]
@inproceedings{FonsecaDBGPVB10-1,
title = {Analysis of resistive-bridging defects in SRAM core-cells: A comparative study from 90nm down to 40nm technology nodes},
author = {Renan Alves Fonseca and Luigi Dilillo and Alberto Bosio and Patrick Girard and Serge Pravossoudovitch and Arnaud Virazel and Nabil Badereddine},
year = {2010},
doi = {10.1109/ETSYM.2010.5512768},
url = {http://dx.doi.org/10.1109/ETSYM.2010.5512768},
tags = {analysis},
researchr = {https://researchr.org/publication/FonsecaDBGPVB10-1},
cites = {0},
citedby = {0},
pages = {132-137},
booktitle = {15th European Test Symposium (ETS 2010), May 24-28, 2010, Prague, Czech Republic},
publisher = {IEEE Computer Society},
isbn = {978-1-4244-5833-2},
}