Shuntaro Fujii, Isao Maru, Soichi Morita, Tsutomu Miyazaki. Experimental Study on Effects of Boron Transient Enhanced Diffusion on Channel Size Dependences of Low Frequency Noise in NMOSFETs. In IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019. pages 1-5, IEEE, 2019. [doi]
@inproceedings{FujiiMMM19,
title = {Experimental Study on Effects of Boron Transient Enhanced Diffusion on Channel Size Dependences of Low Frequency Noise in NMOSFETs},
author = {Shuntaro Fujii and Isao Maru and Soichi Morita and Tsutomu Miyazaki},
year = {2019},
doi = {10.1109/IRPS.2019.8720585},
url = {https://doi.org/10.1109/IRPS.2019.8720585},
researchr = {https://researchr.org/publication/FujiiMMM19},
cites = {0},
citedby = {0},
pages = {1-5},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019},
publisher = {IEEE},
isbn = {978-1-5386-9504-3},
}