Y. Fujisaki, Hidenobu Tsugawa, K. Sakai, H. Kumagai, R. Nakamura, Tomoharu Ogita, S. Endo, T. Iwase, H. Takase, K. Yokochi, S. Yoshida, S. Shimada, Y. Otake, T. Wakano, H. Hiyama, K. Hagiwara, M. Arakawal, S. Matsumotol, H. Maeda, K. Sugihara, K. Takabayashi, M. Ono, K. Ishibashi, K. Yamamoto. A back-illuminated 6 μm SPAD depth sensor with PDE 36.5% at 940 nm via combination of dual diffraction structure and 2×2 on-chip lens. In 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023. pages 1-2, IEEE, 2023. [doi]
@inproceedings{FujisakiTSKNOEI23,
title = {A back-illuminated 6 μm SPAD depth sensor with PDE 36.5% at 940 nm via combination of dual diffraction structure and 2×2 on-chip lens},
author = {Y. Fujisaki and Hidenobu Tsugawa and K. Sakai and H. Kumagai and R. Nakamura and Tomoharu Ogita and S. Endo and T. Iwase and H. Takase and K. Yokochi and S. Yoshida and S. Shimada and Y. Otake and T. Wakano and H. Hiyama and K. Hagiwara and M. Arakawal and S. Matsumotol and H. Maeda and K. Sugihara and K. Takabayashi and M. Ono and K. Ishibashi and K. Yamamoto},
year = {2023},
doi = {10.23919/VLSITechnologyandCir57934.2023.10185251},
url = {https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185251},
researchr = {https://researchr.org/publication/FujisakiTSKNOEI23},
cites = {0},
citedby = {0},
pages = {1-2},
booktitle = {2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023},
publisher = {IEEE},
isbn = {978-4-86348-806-9},
}