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A back-illuminated 6 μm SPAD depth sensor with PDE 36.5% at 940 nm via combination of dual diffraction structure and 2×2 on-chip lens

Y. Fujisaki, Hidenobu Tsugawa, K. Sakai, H. Kumagai, R. Nakamura, Tomoharu Ogita, S. Endo, T. Iwase, H. Takase, K. Yokochi, S. Yoshida, S. Shimada, Y. Otake, T. Wakano, H. Hiyama, K. Hagiwara, M. Arakawal, S. Matsumotol, H. Maeda, K. Sugihara, K. Takabayashi, M. Ono, K. Ishibashi, K. Yamamoto. A back-illuminated 6 μm SPAD depth sensor with PDE 36.5% at 940 nm via combination of dual diffraction structure and 2×2 on-chip lens. In 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023. pages 1-2, IEEE, 2023. [doi]

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