17.2 A 64kb 16nm asynchronous disturb current free 2-port SRAM with PMOS pass-gates for FinFET technologies - researchr publication authors

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Hidehiro Fujiwara, Li-wen Wang, Yen-Huei Chen, Kao-Cheng Lin, Dar Sun, Shin-Rung Wu, Jhon-Jhy Liaw, Chih-Yung Lin, Mu-Chi Chiang, Hung-Jen Liao, Shien-Yang Wu, Jonathan Chang. 17.2 A 64kb 16nm asynchronous disturb current free 2-port SRAM with PMOS pass-gates for FinFET technologies. In 2015 IEEE International Solid-State Circuits Conference, ISSCC 2015, Digest of Technical Papers, San Francisco, CA, USA, February 22-26, 2015. pages 1-3, IEEE, 2015. [doi]

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