Hidehiro Fujiwara, Li-wen Wang, Yen-Huei Chen, Kao-Cheng Lin, Dar Sun, Shin-Rung Wu, Jhon-Jhy Liaw, Chih-Yung Lin, Mu-Chi Chiang, Hung-Jen Liao, Shien-Yang Wu, Jonathan Chang. 17.2 A 64kb 16nm asynchronous disturb current free 2-port SRAM with PMOS pass-gates for FinFET technologies. In 2015 IEEE International Solid-State Circuits Conference, ISSCC 2015, Digest of Technical Papers, San Francisco, CA, USA, February 22-26, 2015. pages 1-3, IEEE, 2015. [doi]
@inproceedings{FujiwaraWCLSWLL15,
title = {17.2 A 64kb 16nm asynchronous disturb current free 2-port SRAM with PMOS pass-gates for FinFET technologies},
author = {Hidehiro Fujiwara and Li-wen Wang and Yen-Huei Chen and Kao-Cheng Lin and Dar Sun and Shin-Rung Wu and Jhon-Jhy Liaw and Chih-Yung Lin and Mu-Chi Chiang and Hung-Jen Liao and Shien-Yang Wu and Jonathan Chang},
year = {2015},
doi = {10.1109/ISSCC.2015.7063051},
url = {http://dx.doi.org/10.1109/ISSCC.2015.7063051},
researchr = {https://researchr.org/publication/FujiwaraWCLSWLL15},
cites = {0},
citedby = {0},
pages = {1-3},
booktitle = {2015 IEEE International Solid-State Circuits Conference, ISSCC 2015, Digest of Technical Papers, San Francisco, CA, USA, February 22-26, 2015},
publisher = {IEEE},
isbn = {978-1-4799-6224-2},
}